Tender Details
Tender Title / Description
| Tender Title | MOCVD epitaxy structure |
|---|---|
| Tender Description | mocvd epitaxy structure: gan hemtmocvd epitaxy structure: gan hemt on 4” sic substrate productspecification: an mocvd epitaxy structure: gan hemt structure on 4” sicepi structure specification: o thickness uniformity <(><<)> 5%; o xrd r.c.002 fwhm<(><<)>=0.1deg; o epd <(><<)>= 1*10^9/cm2; o channelresistivity <(><<)>= 350 ohm*cm; gan hemt epi-structure: cap layer gan;2-3nm; alxgan(1-x) spacer; 25nm, x=25%; aln spacer; 0.8nm; undopedgan hemt layer; 3μm; aln; 40nm; si 6h-sic substrate, 4-inch; substratespecification: o si-type 6h-sic substrate; o mpd<(><<)>5/cm2, primegrade; o diameter: 100mm (4”); o thickness 500μm (±25μm); o waferorientation <(><<)>0001>, off-cut 0.5deg, single side polished; o edgeexclusion: 1mm; o warp: <(><<)> 35 μm; o bow: <(><<)> 20 μm; o ttv: <(><<)> 10 μm; o resistivity >= 1.0*10^11 ohm*cm; |
| Comments | mocvd epitaxy structure: gan hemtmocvd epitaxy structure: gan hemt on 4” sic substrate productspecification: an mocvd epitaxy structure: gan hemt structure on 4” sicepi structure specification: o thickness uniformity <(><<)> 5%; o xrd r.c.002 fwhm<(><<)>=0.1deg; o epd <(><<)>= 1*10^9/cm2; o channelresistivity <(><<)>= 350 ohm*cm; gan hemt epi-structure: cap layer gan;2-3nm; alxgan(1-x) spacer; 25nm, x=25%; aln spacer; 0.8nm; undopedgan hemt layer; 3μm; aln; 40nm; si 6h-sic substrate, 4-inch; substratespecification: o si-type 6h-sic substrate; o mpd<(><<)>5/cm2, primegrade; o diameter: 100mm (4”); o thickness 500μm (±25μm); o waferorientation <(><<)>0001>, off-cut 0.5deg, single side polished; o edgeexclusion: 1mm; o warp: <(><<)> 35 μm; o bow: <(><<)> 20 μm; o ttv: <(><<)> 10 μm; o resistivity >= 1.0*10^11 ohm*cm; |
Important Dates
| Published Date | |
|---|---|
| Due Date | 09 Mar 2026 00:00:00 |
Estimate and EMD
| Estimated Value | 0.0 |
|---|---|
| EMD | 0 INR |
| Processing Fee | 0 INR |