Description: DISCRETE SEMICONDUCTOR DEVICES (ACTIVE -DA2B2000468E1D2: SURFACE MOUNT RECTIFIER DIODE, 400V, 1 AMPS CURRENT, DO-214AC(SMA) ; DA2B3000497S1D2: DIODE HIGH SPEED SWITCHING HERMETICALLY SEALED SURFACE MOUNT, SOD80C(SMD) PACKAGE, REVERSE VOLTAGE 75V DC ; DA2B9000460D6D2: DIODE, SMD, SCHOTTKY POWER RECTIFIER, SOD-123 PKG. 0.5A, 40V ; DA2B2000560E5D1: DIODE, FAST RECOVERY RECTIFIER, 800V, 3A, DO-214AD PACKAGE ; DA2B8000553E5D1: DIODE, TVS, ESD SUPPRESSOR, UNI DIRECTION, 200V, 1500W, DO-201-2 PACKAGE ; DA2B2000449E1D2: DIODE, ULTRAFAST,LOW LOSS CONTROLLED AVALANCHE RECTIFIER DO-214AC PAC. ; DA2B3000290D5A2: DIODE, FAST RECOVERY,2X10A,200V,SURGE 100A,Vf 0.85V,at 5A,T(rr)35 nsec.Pkg. TO-220 AB(COMMON CATHODE) ; DA2B3000148S1A2: DIODE,SILICON EPITAXIAL.HIGH SPEED DIODE,GLASS CASE MINI MELF(SOD80),FWD CURRENT 200ma,FWD VOLT.1000mV at 100mA,MAX.REV.75V ; DA2G3330001S1D2: DIODE, ZENER 3.3.V, 0.5W,5%,SOD80C PKG.TEMP- -65 TO 200 Deg.C ; DA2B4000447E3D2: 2AMPS STYLE KBPM.GLASS PASSIVATED SINGLE -PHASE BRIDGE RECTIFIER.REV- VOLT. 50 - 1000V
Details: DA2B2000468E1D2 , DA2B3000497S1D2 , DA2B9000460D6D2 , DA2B2000560E5D1 , DA2B8000553E5D1 , DA2B2000449E1D2 , /Item Category DA2B3000290D5A2 , DA2B3000148S1A2 , DA2G3330001S1D2 , DA2B4000447E3D2 , DA1B1000416S1A2 , DA1B2000444S1D2 , DA1C1000440D2D2 , DA1B1000445S1D2 SURFACE MOUNT RECTIFIER DIODE, 400V, 1 AMPS CURRENT, DO-214AC(SMA), DIODE HIGH SPEED SWITCHING HERMETICALLY SEALED SURFACE MOUNT, SOD80C(SMD) PACKAGE, REVERSE VOLTAGE 75V DC, DIODE, SMD, SCHOTTKY POWER RECTIFIER, SOD-123 PKG. 0.5A, 40V, DIODE, FAST RECOVERY RECTIFIER, 800V, 3A, DO-214AD PACKAGE, DIODE, TVS, ESD SUPPRESSOR, UNI DIRECTION, 200V, 1500W, DO-201-2 PACKAGE, DIODE, ULTRAFAST,LOW LOSS CONTROLLED AVALANCHE RECTIFIER DO-214AC PAC., DIODE, FAST RECOVERY,2X10A,200V,SURGE 100A,Vf
Sector: Telecommunication